Effect of doping and defects on the optoelectronic properties of ZrSe2 based on the first principle

[1] Novoselov KS(2004)Electric field effect in atomically thin carbon films Science 306 666-669

[2] Geim AK(2007)The rise of graphene Nat Mater 6 183-191

[3] Morozov SV(2014)Photodetectors based on graphene, other two-dimensional materials and hybrid systems Nature Nanotech 9 780-793

[4] Jiang D(2005)Two-dimensional atomic crystals Proc Natl Acad Sci USA 102 10451-11045

[5] Zhang Y(2010)Frictional characteristics of atomically thin sheets Science 328 76-80

[6] Dubonos SV(2015)Jingbo Li, S Tongay, Nano Lett 15 1660-2239

[7] Grigorieva IV(2016)Defect-tolerant monolayer transition metal dichalcogenides[J] Nano Lett 16 2234-1458

[8] Firsov AA(1965)Preparation and optical properties of group IV–VI 2 chalcogenides having the CdI 2 structure J Phys Chem Solids 26 1445-281

[9] Geim AK(2009)Growth and band gap determination of the ZrS xSe 2–x single crystal series Phys Rev 80 278-923

[10] Novoselov KS(2019)Study on the effect of Si vacancy defects on the electronic structure and optical properties of Ca_2Si Solid State Electronics Res Progress 39 916-2908

[1] Novoselov KS(2004)Electric field effect in atomically thin carbon films Science 306 666-669

[2] Geim AK(2007)The rise of graphene Nat Mater 6 183-191

[3] Morozov SV(2014)Photodetectors based on graphene, other two-dimensional materials and hybrid systems Nature Nanotech 9 780-793

[4] Jiang D(2005)Two-dimensional atomic crystals Proc Natl Acad Sci USA 102 10451-11045

[5] Zhang Y(2010)Frictional characteristics of atomically thin sheets Science 328 76-80

[6] Dubonos SV(2015)Jingbo Li, S Tongay, Nano Lett 15 1660-2239

[7] Grigorieva IV(2016)Defect-tolerant monolayer transition metal dichalcogenides[J] Nano Lett 16 2234-1458

[8] Firsov AA(1965)Preparation and optical properties of group IV–VI 2 chalcogenides having the CdI 2 structure J Phys Chem Solids 26 1445-281

[9] Geim AK(2009)Growth and band gap determination of the ZrS xSe 2–x single crystal series Phys Rev 80 278-923

[10] Novoselov KS(2019)Study on the effect of Si vacancy defects on the electronic structure and optical properties of Ca_2Si Solid State Electronics Res Progress 39 916-2908