Temperature dependence of the band structure of wurtzite-type semiconductor compounds: Gallium and aluminum nitrides

The method of empirical pseudopotential was used for the first time for the calculation of the temperature dependence of the energy extrema at the Г L, K, M, A, and H high-symmetry points of the Brillouin zone for hexagonal modifications of gallium and aluminum nitrides, as well as of the energies of the main inter-band transitions between these extrema. The effect of the temperature dependence of electron-phonon interaction on the band structure of the crystal was described using the Debye-Waller factors, and the contribution of the linear expansion of the lattice was taken into account via the temperature dependence of the linear expansion coefficient. The features of the temperature dependence of the energy levels and interband transitions were analyzed in detail. Comparison of the calculations with the experimental data in available publications has shown good agreement.