Modeling of the interstitial diffusion of boron in crystalline silicon

被引：0
|
作者：
Velichko O.I. [1 ]
Aksenov V.V. [1 ]
Kovaleva A.P. [1 ]
机构：
[1] Belarusian State University of Informatics and Radio Electronics, 6 P. Brovka Str., Minsk
来源：
Journal of Engineering Physics and Thermophysics | 2012年 / 85卷 / 04期
关键词：
Boron; Diffusion; Low-temperature annealing; Silicon;
D O I：
10.1007/s10891-012-0731-9
中图分类号：
学科分类号：
摘要：
The redistribution of ion-implanted boron in crystalline silicon under fast low-temperature annealing has been modeled. It has been shown that in the region of low impurity concentration "tails" are formed by long-range migration of interstitial boron atoms. © 2012 Springer Science+Business Media, Inc.
引用
收藏
页码：926 / 931
页数：5
相关论文
共 50 条
  • [21] Prediction of the anomalous fluorine-silicon interstitial pair diffusion in crystalline silicon
    Harrison, Scott A.
    Edgar, Thomas F.
    Hwang, Gyeong S.
    PHYSICAL REVIEW B, 2006, 74 (12):
  • [22] Experimental investigations of boron diffusion mechanisms in crystalline and amorphous silicon
    De Salvador, D.
    Napolitani, E.
    Mirabella, S.
    Bruno, E.
    Impellizzeri, G.
    Bisognin, G.
    Pecora, E. F.
    Priolo, F.
    Carnera, A.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2008, 154 (240-246): : 240 - 246
  • [23] COEFFICIENT OF DEFORMATION OF SILICON CRYSTALLINE LATTICE AT DIFFUSION OF BORON AND ANTIMONY
    SMIRNOV, IN
    FIZIKA TVERDOGO TELA, 1977, 19 (05): : 1473 - 1475
  • [24] Indirect Diffusion Mechanism of Boron Atoms in Crystalline and Amorphous Silicon
    Mirabella, Salvo
    De Salvador, Davide
    Napolitani, Enrico
    Bruno, Elena
    Impellizzeri, Giuliana
    Bisognin, Gabriele
    Pecora, Emanuele Francesco
    Carnera, Alberto
    Priolo, Francesco
    DOPING ENGINEERING FOR FRONT-END PROCESSING, 2008, 1070 : 193 - +
  • [25] Point defect-based modeling of diffusion and electrical activation of ion implanted boron in crystalline silicon
    1600, American Inst of Physics, Woodbury, NY, USA (78):
  • [26] Reduced boron diffusion under interstitial injection in fluorine implanted silicon
    Kham, M. N.
    Matko, I.
    Chenevier, B.
    Ashburn, P.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (11)
  • [27] Concentration-Dependence of Self-Interstitial and Boron Diffusion in Silicon
    Wind, Wolfgang
    DOPING ENGINEERING FOR FRONT-END PROCESSING, 2008, 1070 : 285 - 290
  • [28] TRAP-LIMITED INTERSTITIAL DIFFUSION AND ENHANCED BORON CLUSTERING IN SILICON
    STOLK, PA
    GOSSMANN, HJ
    EAGLESHAM, DJ
    JACOBSON, DC
    POATE, JM
    LUFTMAN, HS
    APPLIED PHYSICS LETTERS, 1995, 66 (05) : 568 - 570
  • [29] Ultrafast interstitial injection during transient enhanced diffusion of boron in silicon
    Huizing, HGA
    Visser, CCG
    Cowern, NEB
    Stolk, PA
    deKruif, RCM
    APPLIED PHYSICS LETTERS, 1996, 69 (09) : 1211 - 1213
  • [30] Reduced boron diffusion under interstitial injection in fluorine implanted silicon
    Kham, M.N.
    Matko, I.
    Chenevier, B.
    Ashburn, P.
    Journal of Applied Physics, 2007, 102 (11):
12345