Modeling of the interstitial diffusion of boron in crystalline silicon

被引：0
|
作者：
Velichko O.I. [1 ]
Aksenov V.V. [1 ]
Kovaleva A.P. [1 ]
机构：
[1] Belarusian State University of Informatics and Radio Electronics, 6 P. Brovka Str., Minsk
来源：
Journal of Engineering Physics and Thermophysics | 2012年 / 85卷 / 04期
关键词：
Boron; Diffusion; Low-temperature annealing; Silicon;
D O I：
10.1007/s10891-012-0731-9
中图分类号：
学科分类号：
摘要：
The redistribution of ion-implanted boron in crystalline silicon under fast low-temperature annealing has been modeled. It has been shown that in the region of low impurity concentration "tails" are formed by long-range migration of interstitial boron atoms. © 2012 Springer Science+Business Media, Inc.
引用
收藏
页码：926 / 931
页数：5
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