Fabrication and characterization of CdZnTe radiation detectors with a new P-I-N design

被引：0
作者：
R. Sudhaesanan
G. D. Vakerlis
N. H. Karam
机构：
[1] Spire Corporation,
[2] Spectrolab,undefined
[3] Inc.,undefined
来源：
Journal of Electronic Materials | 1997年 / 26卷
关键词：
CdZnTe; gamma-ray detector; HPB-CdZnTe; P-I-N;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We report on the design, fabrication, and performance of CdZnTe gamma-ray detectors with a new P-I-N structure for spectroscopic applications. Highpressure and conventional vertical-Bridgman CdZnTe crystals were used for detector fabrication. P and n layers were deposited by thermal evaporation, and by optimizing the deposition conditions we achieved low leakage current (approximately 15 nA at 1000 V) and good performance. Spectral response data at high bias voltages showed improved energy resolution and peak-to-valley ratios for 241Am and 57Co compared to metal-semiconductor-metal detectors.
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收藏
页码：745 / 749
页数：4
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