Investigation of electrical properties of organic memristors based on thin polyaniline-graphene films

被引：10

作者：

Berzina T.S. ^{[2
]}

Gorshkov K.V. ^{[1
]}

Erokhin V.V. ^{[2
]}

Nevolin V.K. ^{[1
]}

Chaplygin Yu.A. ^{[1
]}

机构：

[1] Moscow Institute of Electronic Engineering, Technical University, Zelenograd, Moscow 124498

[2] CNR-IMEM, Department of Physics, University of Parma, Parma

来源：

Russian Microelectronics | 2013年 / 42卷 / 01期

关键词：

PANI; Graphene Sheet; RUSSIAN Microelectronics; Electron Current; Graphene Film;

D O I：

10.1134/S1063739713010022

中图分类号：

学科分类号：

摘要：

The possibility of integration of graphene films applying the Langmuir-Schaefer method to the structure of the working channel of the organic memristor is investigated. The variation in electrical characteristics of memristor structures in the presence of graphenes in the working channel of the element is analyzed. New effects such as an increased working voltage range and the S-like shape of current-voltage characteristics are found, which is most probably associated with the charge accumulation in the region of graphene sheets. © 2013 Pleiades Publishing, Ltd.

引用

页码：27 / 32

页数：5

共 8 条

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