Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers

被引：0
作者：
Xiang-Bin Su
Ying Ding
Ben Ma
Ke-Lu Zhang
Ze-Sheng Chen
Jing-Lun Li
Xiao-Ran Cui
Ying-Qiang Xu
Hai-Qiao Ni
Zhi-Chuan Niu
机构：
[1] Northwest University,National Key Laboratory of Photoelectric Technology and Functional Materials (Culture Base), Institute of Photonics and Photonic Technology
[2] Chinese Academy of Sciences,State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors
[3] University of Chinese Academy of Sciences,College of Materials Science and Opto
[4] Army Engineering University,Electronic Technology
[5] Beihang University,Department of Missile Engineering, Shijiazhuang Campus
[6] Xidian University,School of Physics and Nuclear Energy Engineering
来源：
Nanoscale Research Letters | 2018年 / 13卷
关键词：
Quantum dot (QD); Annealing; Bimodal size; Molecular beam epitaxy (MBE); Laser;
D O I：
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学科分类号：
摘要：
The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of growing high-density InAs/GaAs quantum dots, bimodal size occurs due to large mismatch and other factors. The bimodal size in the InAs/GaAs quantum dot system is eliminated by the method of high-temperature annealing and optimized the in situ annealing temperature. The annealing temperature is taken as the key optimization parameters, and the optimal annealing temperature of 680 °C was obtained. In this process, quantum dot growth temperature, InAs deposition, and arsenic (As) pressure are optimized to improve quantum dot quality and emission wavelength. A 1.3-μm high-performance F-P quantum dot laser with a threshold current density of 110 A/cm2 was demonstrated.
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