High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy

被引：0

作者：

Shulong Lu

Lian Ji

Wei He

Pan Dai

Hui Yang

Masayuki Arimochi

Hiroshi Yoshida

Shiro Uchida

Masao Ikeda

机构：

[1] Suzhou Industrial Park,Suzhou Institute of Nano

[2] Sony Corporation,Tech and Nano

[3] Atsugi Tec.,Bionics, Chinese Academy of Sciences

来源：

Nanoscale Research Letters | / 6卷

关键词：

GaAs; Solar Cell; External Quantum Efficiency; Surface Recombination; Window Layer;

D O I：

暂无

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学科分类号：

摘要：

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell.

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