High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy

被引:0
作者
Shulong Lu
Lian Ji
Wei He
Pan Dai
Hui Yang
Masayuki Arimochi
Hiroshi Yoshida
Shiro Uchida
Masao Ikeda
机构
[1] Suzhou Industrial Park,Suzhou Institute of Nano
[2] Sony Corporation,Tech and Nano
[3] Atsugi Tec.,Bionics, Chinese Academy of Sciences
来源
Nanoscale Research Letters | / 6卷
关键词
GaAs; Solar Cell; External Quantum Efficiency; Surface Recombination; Window Layer;
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摘要
We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell.
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