Modulation of a quantum well potential by a quantum-dot array

被引：0
作者：
A. F. Tsatsul’nikov
A. Yu. Egorov
A. E. Zhukov
A. R. Kovsh
V. M. Ustinov
N. N. Ledentsov
M. V. Maksimov
A. V. Sakharov
A. A. Suvorova
P. S. Kop’ev
Zh. I. Alferov
D. Bimberg
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
[2] Technische Universität Berlin,Institut für Festköorperphysik
来源：
Semiconductors | 1997年 / 31卷
关键词：
Potential Energy; Magnetic Material; Electromagnetism;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The possibility of locally varying the potential energy of the electrons and holes localized in a quantum well by a quantum-dot array deposited in the immediate vicinity of the quantum well is demonstrated. These changes in the potential energy are induced when a strain arises in the quantum-dot region.
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页码：88 / 91
页数：3
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