Active Micromachined Integrated Terahertz Circuits

被引：0

作者：

H. Kazemi

S. T. G. Wootton

N. J. Cronin

S. R. Davies

R. E. Miles

R. D. Pollard

J. M. Chamberlain

D. P. Steenson

J. W. Bowen

机构：

[1] University of Bath,Department of Physics

[2] University of Leeds,Department of Electronic Engineering

[3] University of Nottingham,Department of Physics

[4] University of Reading,Department of Cybernetics

来源：

International Journal of Infrared and Millimeter Waves | 1999年 / 20卷

关键词：

Schottky barrier diode; Micromachining; Terahertz circuits; Rectangular waveguide; Platinum Plating; Photolithography;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Schottky barrier diodes have been integrated into on-chip rectangular waveguides. Two novel techniques have been developed to fabricate diodes with posts suitable for integration into waveguides. One technique produces diodes with anode diameters of the order of microns with post heights from 90 to 125 microns and the second technique produces sub-micron anodes with post heights around 20 microns. A method has been developed to incorporate these structures into a rectangular waveguide and provide a top contact onto the anode which could be used as an I.F. output in a mixer circuit. Devices have been fabricated and D.C. characterized.

引用

页码：967 / 974

页数：7