Plasmon satellites in valence-band photoemission spectroscopyAb initio study of the photon-energy dependence in semiconductors

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作者
M. Guzzo
J. J. Kas
F. Sottile
M. G. Silly
F. Sirotti
J. J. Rehr
L. Reining
机构
[1] CNRS,Laboratoire des Solides Irradiés, École Polytechnique
[2] CEA-DSM,Department of Physics
[3] University of Washington,undefined
[4] Synchrotron-SOLEIL,undefined
来源
The European Physical Journal B | 2012年 / 85卷
关键词
Topical issue: Challenges and solutions in GW calculations for complex systems. Guest editors: Feliciano Giustino, Paolo Umari and Angel Rubio;
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摘要
We present experimental data and theoretical results for valence-band satellites in semiconductors, using the prototypical example of bulk silicon. In a previous publication we introduced a new approach that allows us to describe satellites in valence photoemission spectroscopy, in good agreement with experiment. Here we give more details; we show how the the spectra change with photon energy, and how the theory explains this behaviour. We also describe how we include several effects which are important to obtain a correct comparison between theory and experiment, such as secondary electrons and photon cross sections. In particular the inclusion of extrinsic losses and their dependence on the photon energy are key to the description of the energy dependence of spectra.
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