Electromagnetic metamaterial-inspired band gap and perfect transmission in semiconductor and graphene-based electronic and photonic structures

被引:0
作者
M. R. C. Mahdy
Ayed Al Sayem
Arif Shahriar
Jubayer Shawon
Golam Dastegir Al-Quaderi
Ifat Jahangir
M. A. Matin
机构
[1] National University of Singapore,Department of Electrical and Computer Engineering
[2] Bangladesh University of Engineering and Technology,Dept. of EEE
[3] Monash University,Department of Electrical and Computer Systems Engineering
[4] University of Malaya,Department of Electrical and Computer Engineering
[5] University of Dhaka,Department of Physics
[6] University of South Carolina,Department of Electrical Engineering
来源
The European Physical Journal Plus | / 131卷
关键词
Gate Voltage; Matter Wave; Dielectric Thickness; Quantum Capacitance; Metamaterial Structure;
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摘要
In this article, at first we propose a unified and compact classification of single negative electromagnetic metamaterial-based perfect transmission unit cells. The classes are named as: type-A, -B and -C unit cells. Then based on the classification, we have extended these ideas in semiconductor and graphene regimes. For type-A: Based on the idea of electromagnetic Spatial Average Single Negative bandgap, novel bandgap structures have been proposed for electron transmission in semiconductor heterostructures. For type-B: with dielectric-graphene-dielectric structure, almost all angle transparency is achieved for both polarizations of electromagnetic wave in the terahertz frequency range instead of the conventional transparency in the microwave frequency range. Finally the application of the gated dielectric-graphene-dielectric has been demonstrated for the modulation and switching purpose.
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