Unexpected Giant-Gap Quantum Spin Hall Insulator in Chemically Decorated Plumbene Monolayer

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作者
Hui Zhao
Chang-wen Zhang
Wei-xiao Ji
Run-wu Zhang
Sheng-shi Li
Shi-shen Yan
Bao-min Zhang
Ping Li
Pei-ji Wang
机构
[1] School of Physics and Technology,
[2] University of Jinan,undefined
[3] School of Physics,undefined
[4] State Key laboratory of Crystal Materials,undefined
[5] Shandong University,undefined
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Scientific Reports | / 6卷
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摘要
Quantum spin Hall (QSH) effect of two-dimensional (2D) materials features edge states that are topologically protected from backscattering by time-reversal symmetry. However, the major obstacles to the application for QSH effect are the lack of suitable QSH insulators with a large bulk gap. Here, we predict a novel class of 2D QSH insulators in X-decorated plumbene monolayers (PbX; X = H, F, Cl, Br, I) with extraordinarily giant bulk gaps from 1.03 eV to a record value of 1.34 eV. The topological characteristic of PbX mainly originates from s-px,y band inversion related to the lattice symmetry, while the effect of spin-orbital coupling (SOC) is only to open up a giant gap. Their QSH states are identified by nontrivial topological invariant Z2 = 1, as well as a single pair of topologically protected helical edge states locating inside the bulk gap. Noticeably, the QSH gaps of PbX are tunable and robust via external strain. We also propose high-dielectric-constant BN as an ideal substrate for the experimental realization of PbX, maintaining its nontrivial topology. These novel QSH insulators with giant gaps are a promising platform to enrich topological phenomena and expand potential applications at high temperature.
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  • [1] Yan B(2012)Topological Materials Rep. Prog. Phys. 75 096501-096523
  • [2] Zhang SC(2013)Majorana’s Wires Nature nanotechnology. 8 194-198
  • [3] Moore JE(2010)Colloquium: Topological Insulators Rev. Mod. Phys. 82 3045-3067
  • [4] Hasan MZ(2011)Topological Insulators and Superconductors Rev. Mod. Phys. 83 1057-1110
  • [5] Kane CL(2005)Quantum Spin Hall Effect in Graphene Phys. Rev. Lett. 95 226801-1761
  • [6] Qi XL(2005)Z Phys. Rev. Lett. 95 146802-770
  • [7] Zhang SC(2006) Topological Order and the Quantum Spin Hall Effect Science. 314 1757-1761
  • [8] Kane CL(2007)Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells Science. 318 766-106806
  • [9] Mele EJ(2015)Quantum Spin Hall Insulator State in HgTe Quantum Wells Phys. Rev. Lett. 114 096802-442
  • [10] Kane CL(2008)Robust Helical Edge Transport in Gated InAs/GaSb Bilayers Phys. Rev. Lett. 100 236601-181