A comparison of the recombination efficiency in green-emitting InGaN quantum dots and quantum wells

被引：0
作者：
Il-Kyu Park
Min-Ki Kwon
Seong-Ju Park
机构：
[1] Yeungnam University,Department of Electronic Engineering
[2] Chosun University,Department of Photonic Engineering
[3] Gwangju Institute of Science and Technology,Department of Materials Science and Engineering
来源：
Journal of the Korean Physical Society | 2012年 / 60卷
关键词：
Quantum wells; Quantum dots; Light-emitting diodes; InGaN;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A comparative investigation of the recombination efficiency of green-emitting InGaN quantum dots (QDs) and quantum wells (QWs) is reported in this paper. Optical investigations using temperature dependent photoluminescence (PL) results showed that the internal quantum efficiency of InGaN QDs at room temperature was 8.7 times larger than that found for InGaN QWs because they provided dislocation-free recombination sites for the electrical charge carriers. The excitation-power-dependent PL and electroluminescence results showed that the effect of the polarization-induced electric field on the recombination process of electrical charge carriers in the QDs was negligibly small whereas it was dominant in the QWs. These results indicate that InGaN QDs are more beneficial than QWs in improving the luminescence efficiency of LEDs in the green spectral range.
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页码：1666 / 1670
页数：4
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