Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition

被引：0

作者：

V. G. Shengurov

D. O. Filatov

S. A. Denisov

V. Yu. Chalkov

N. A. Alyabina

A. V. Zaitsev

机构：

[1] Lobachevsky State University of Nizhny Novgorod,

来源：

Semiconductors | 2019年 / 53卷

关键词：

tunnel diode; Ge/Si structures; hot-wire chemical vapor deposition;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：1238 / 1241

页数：3

共 52 条

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