Solution-processed semiconductors for next-generation photodetectors (vol 2, 16100, 2017)

Efficient light detection is central to modern science and technology. Current photodetectors mainly use photodiodes based on crystalline inorganic elemental semiconductors, such as silicon, or compounds such as III-V semiconductors. Photodetectors made of solution-processed semiconductors-which include organic materials, metal-halide perovskites and quantum dots-have recently emerged as candidates for next-generation light sensing. They combine ease of processing, tailorable optoelectronic properties, facile integration with complementary metal-oxide-semiconductors, compatibility with flexible substrates and good performance. Here, we review the recent advances and the open challenges in the field of solution-processed photodetectors, examining the topic from both the materials and the device perspective and highlighting the potential of the synergistic combination of materials and device engineering. We explore hybrid photo-transistors and their potential to overcome trade-offs in noise, gain and speed, as well as the rapid advances in metal-halide perovskite photodiodes and their recent application in narrowband filterless photodetection.