Features of the conductivity of the quasi-one-dimensional compound TiS3

被引：0
|
作者：
I. G. Gorlova
V. Ya. Pokrovskii
S. G. Zybtsev
A. N. Titov
V. N. Timofeev
机构：
[1] Russian Academy of Sciences,Kotel’nikov Institute of Radio Engineering and Electronics
[2] Ural Branch of Russian Academy of Sciences,Institute of Metal Physics
[3] Russian Academy of Sciences,Baikov Institute of Metallurgy and Materials Sciences
来源：
Journal of Experimental and Theoretical Physics | 2010年 / 111卷
关键词：
Charge Density Wave; Threshold Form; Transverse Conductivity; Electric Field Dependence; Nonlinear Conductivity;
D O I：
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摘要：
The structure and transport properties of single crystal whiskers of the TiS3 quasi-one-dimensional semiconductor have been investigated. The anisotropy of the conductivity in the plane of layers (ab) has been measured as a function of the temperature. The anisotropy at 300 K is 5 and increases with a decrease in the temperature. Features on the temperature dependences of the conductivity along and across the chains are observed at 59 and 17 K. Near the same temperatures the form of the current-voltage characteristics measured along the chains is qualitatively changed. The current-voltage characteristics below 60 K exhibit nonlinearity and have a threshold form below 10 K. The results indicate possible phase transitions and the collective conduction mechanism at low temperatures.
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页码：298 / 303
页数：5
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