Adsorption removal of arsine by modified activated carbon

被引:1
作者
Ming Jiang
Yangwei Bai
Ping Ning
Xiaofeng Huang
Hongpan Liu
Jianqiu Fu
机构
[1] Yunnan Agricultural University,College of Resources and Environment
[2] Chinese Research Academy of Environmental Sciences,Faculty of Environmental Science and Engineering
[3] Kunming University of Science and Technology,undefined
来源
Adsorption | 2015年 / 21卷
关键词
Arsine; Modified activated carbon; Adsorption; Sulfonated cobalt phthalocyanine;
D O I
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中图分类号
学科分类号
摘要
The modified activated carbon adsorbents were prepared by impregnation method for removal of arsine (AsH3). The results show that the activated carbons modified with sulfonated cobalt phthalocyanine (CoPcS) and Cu(NO3)2 (denoted as Co/Cu) is found to have significantly enhanced adsorption removal ability. The effects of CoPcS content, calcination temperature, O2 content and pore structure on the AsH3 adsorption are investigated. The optimum conditions for removal of AsH3 are 0.02 wt% of CoPcS content, 400 °C of calcination temperature and 4 vol% of O2 content, respectively. The regions of micropores (14.7 Å < pore width < 20 Å) and mesopores (20 Å < pore width < 43.4 Å) play the predominant role for adsorbing AsH3. The regeneration efficiency of deactivated Co/Cu/AC adsorbent is up to 71.2 %.
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页码:135 / 141
页数:6
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共 172 条
[21]  
Liu SX(2008)O Ind. Eng. Chem. Res. 47 7027-7030
[22]  
Zhang BG(2013) supported CoPcS catalyst and its application to mercaptan oxidation Fuel 108 131-136
[23]  
Hidaka K(1995)Thermal decomposition of Cu(NO J. Mol. Struct. 358 219-228
[24]  
Asahi H(2014)) RSC Adv. 4 29124-29130
[25]  
Yamamoto K(2009)·3H Talanta 78 321-325
[26]  
Asami K(2007)O at reduced pressures J. Power Sources 171 818-825
[27]  
Satoh J(2003)Removal of phosphorus and sulfur from yellow phosphorus off-gas by metal-modified activated carbon Carbon 41 139-149
[28]  
Gonda S(2003)Effects of AsH Chin. J. Catal. 24 475-482
[29]  
Howard CJ(2014) surface treatment for the improvement of ultra-shallow area-selective regrown GaAs sidewall tunnel junction Adsorption 20 623-630
[30]  
Dagle RA(2012)Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH J. Hazard. Mater. 229–230 128-136