X-ray Diffraction Tomography Using Laboratory Sources for Studying Single Dislocations in a Low Absorbing Silicon Single Crystal

被引:0
作者
D. A. Zolotov
V. E. Asadchikov
A. V. Buzmakov
I. G. D’yachkova
Yu. S. Krivonosov
F. N. Chukhovskii
E. V. Suvorov
机构
[1] Russian Academy of Sciences,Shubnikov Institute of Crystallography, Crystallography and Photonics Federal Scientific Research Centre
[2] Lomonosov Moscow State University,Institute of Solid State Physics
[3] Russian Academy of Sciences,undefined
来源
Optoelectronics, Instrumentation and Data Processing | 2019年 / 55卷
关键词
X-ray topography; X-ray tomography; single dislocation half-loops; algebraic reconstruction techniques;
D O I
暂无
中图分类号
学科分类号
摘要
This paper is a continuation of previous studies on the development of X-ray topo-tomography using laboratory equipment. The results on the spatial location of a single polygonal dislocation half-loop in a silicon single crystal were obtained as a result of testing the sensitivity of the X-ray topo-tomo diffractometer. A comparison was made with high-resolution experimental data obtained at the European synchrotron radiation facility (ESRF). The experimental procedure, software, and hardware for 3D reconstruction of the investigated single defect — a polygonal dislocation half-loop — are described.
引用
收藏
页码:126 / 132
页数:6
相关论文
共 27 条
[1]  
Baruchel J(2013)Synchrotron X-ray Imaging for Crystal Growth Studies C. R. Phys. 14 208-220
[2]  
Di Michiel M(2012)X-ray Diffraction Topography in Physical Materials Science Kristallografiya 57 740-749
[3]  
Lafford T(2001)Three-Dimensional Imaging of Crystal Defects by ‘Topo-Tomography’ J. Appl. Cryst. 34 602-607
[4]  
Shul’pina I L(2012)Three-Dimensional Imaging of Dislocations by X-ray Diffraction Laminography Appl. Phys. Lett. 101 244103-600
[5]  
Prokhorov I A(1975)Simulation des Trajets des Champs D’ondes Dans un Cristal Contenant une Dislocation Acta Cryst. A 591-373
[6]  
Ludwig W(2014)Study of the Diffraction Contrast of Dislocations in X-ray Topo-Tomography: A Computer Simulation and Image Analysis Kristallografiya 59 365-16
[7]  
Cloetens P(2017)The Possibility of Identifying the Spatial Location of Single Dislocations by Topo-Tomography on Laboratory Setups Kristallografiya 62 12-1622
[8]  
Hartwig J(2018)X-ray Topo-Tomography Studies of Linear Crystals in Silicon Single Crystals J. Appl. Cryst. 51 1616-198
[9]  
Hänschke D(1971)X-ray Diffraction Contrast and Geometry of Dislocation Half-Loops in Silicon Kristallografiya 16 190-25147
[10]  
Helfen L(2016)Fast and Flexible X-ray Tomography using the ASTRA Toolbox Opt. Express. 24 25129-undefined