Photoluminescence of ZnSe crystals doped with group V elements

被引：0

作者：

Y. P. Makhnii

I. V. Malimon

Yu. Ya. Chaban

机构：

[1] Fed’kovich State University,

来源：

Inorganic Materials | 2000年 / 36卷

关键词：

ZnSe; Dopant Atom; Zinc Selenide; ZnSe Crystal; Group Versus Element;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The luminescent properties of ZnSe crystals doped with Group V elements from the vapor phase were studied. Doping was found to result in ann- top-type conversion and buildup of edge emission. The near-edge photoluminescence spectra of the crystals studied comprise two bands due to electron-hole recombination through acceptor levels related to dopant atoms and selenium interstitials.

引用

页码：1092 / 1093

页数：1

共 14 条

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[2]

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[3]

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[4]

Krasnov A.N.(1995)Properties of ZnSe Crystals Doped with Phosphorus Neorg. Mater. 31 1294-1295

[5]

Serdyuk V.V.(1982)The Role of Impurities in Refined ZnSe and Other II-VI Semiconductors J. Cryst. Growth 59 15-26

[6]

Vaksman Yu.F.(1997)Effect of Doping with Li, Cd, In, and As on the Optoelectronic Properties of ZnSe Neorg. Mater. 33 181-183

[7]

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