Phase transitions in nonequilibrium electron-hole systems of Si/SiGe/Si nanoheterostructures

被引：0

作者：

Burbaev T.M. ^{[1
]}

Zaitsev V.V. ^{[1
]}

Kurbatov V.A. ^{[1
]}

Lobanov D.N. ^{[2
]}

Novikov A.V. ^{[2
]}

Rzaev M.M. ^{[1
]}

Sibel'din N.N. ^{[1
]}

Tsvetkov V.A. ^{[1
]}

机构：

[1] Lebedev Physical Institute, Russian Academy of Sciences, Moscow 119991

[2] Institute for Physics of Microstructures, Russian Academy of Sciences

来源：

Bulletin of the Russian Academy of Sciences: Physics | 2009年 / 73卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

Pump Intensity; Free Exciton; Mott Transition; SiGe Layer; Transverse Optical;

D O I：

10.3103/S1062873809010195

中图分类号：

学科分类号：

摘要：

The exciton condensation in a Si1-xGex solid solution layer of Si/Si1-xGex/Si heterostructures with the formation of electron-hole liquid has been investigated by low-temperature photoluminescence spectroscopy. In the temperature range above the critical temperature of the transition from an exciton gas to electron-hole liquid, a Mott transition from an exciton gas to electron-hole plasma has been found and investigated. © Allerton Press, Inc. 2009.

引用

页码：70 / 72

页数：2

共 12 条

[1]

Van de Walle C.G., Martin R.M., Phys. Rev. B, 34, (1986)

[2]

Yang L., Watling J.R., Wilkins R.C.W., Et al., Semicond. Sci. Technol., 19, (2004)

[3]

Burbaev T.M., Bobrik E.A., Kurbatov V.A., Et al., JETP Lett., 85, (2007)

[4]

Mott N.F., Metal-Insulator Transition, (1974)

[5]

Pauc N., Calvo V., Eymery J., Et al., Phys. Rev. Lett., 92, (2004)

[6]

Kappei L., Szczytko J., Morier-Genoud F., Deveaud B., Phys. Rev. Lett., 94, (2005)

[7]

Kaminskii A.S., Pokrovskii Ya.E., Alkeev N.V., Zh. Eksp. Teor. Fiz., 59, (1970)

[8]

Dite A.F., Lysenko V.G., Timofeev V.B., Phys. Status Solidi (b), 66, (1974)

[9]

Rice T.M., Hensel J.C., Fillips T.G., Thomas G.A., Solid State Physics, (1977)

[10]

Modern Problems in Condensed Matter Sciences, Vol. 6: Electron-Hole Droplets in Semiconductors, (1983)

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