Luminescence of Native-Defect p-Type ZnO

p-Type ZnO layers with a resistivity of ∼102 Ω cm, hole mobility of 23 cm2 /(V s), and hole concentration of 1015cm–3were grown by radical-beam getter epitaxy, a process involving heat treatment of II–VI crystals in a flow of chalcogen atoms (radicals) and gettering of metal atoms from the crystal bulk. The effect of native defects on the photoluminescence spectra of the layers was studied. The dominant bands in the spectra, those at 370.2 and 400 nm, were attributed to the VZn×and VO¨vacancies.