Atomic-Force Microscopy of Resistive Nonstationary Signal Switching in ZrO2(Y) Films

[1] Waser R.(2007)An overview of materials issues in resistive random access memory Nat. Mater. 6 833-295

[2] Aono M.(2017)Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory J. Electroceram. 39 61-8

[3] Riess I.(2008)undefined Nature 453 80-undefined

[4] Strukov D. B.(2016)undefined Semicond. Sci. Technol. 31 063002-undefined

[5] Snider G. S.(2013)undefined Nat. Commun. 4 2382-undefined

[6] Stewart D. R.(2015)undefined Appl. Phys. Rev. 2 031303-undefined

[7] Williams R. S.(2015)undefined Journal of Materiomics 1 285-undefined

[8] Ielmini D.(2017)undefined J. Appl. Phys. 121 184505-undefined

[9] Park G. S.(2015)undefined Nanoscale Res. Lett. 10 120-undefined

[10] Kim Y. B.(2016)undefined Phys. Status Solidi A 213 316-undefined

[1] Waser R.(2007)An overview of materials issues in resistive random access memory Nat. Mater. 6 833-295

[2] Aono M.(2017)Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory J. Electroceram. 39 61-8

[3] Riess I.(2008)undefined Nature 453 80-undefined

[4] Strukov D. B.(2016)undefined Semicond. Sci. Technol. 31 063002-undefined

[5] Snider G. S.(2013)undefined Nat. Commun. 4 2382-undefined

[6] Stewart D. R.(2015)undefined Appl. Phys. Rev. 2 031303-undefined

[7] Williams R. S.(2015)undefined Journal of Materiomics 1 285-undefined

[8] Ielmini D.(2017)undefined J. Appl. Phys. 121 184505-undefined

[9] Park G. S.(2015)undefined Nanoscale Res. Lett. 10 120-undefined

[10] Kim Y. B.(2016)undefined Phys. Status Solidi A 213 316-undefined