Thresholds of quasi-supercontinuum interband quantum dot lasers

被引:0
作者
C. L. Tan
Y. Wang
H. S. Djie
B. S. Ooi
机构
[1] Lehigh University,Department of Electrical and Computer Engineering, Center for Optical Technologies
[2] OptiComp Corporation,undefined
[3] JDS Uniphase Corporation,undefined
来源
Optical and Quantum Electronics | 2008年 / 40卷
关键词
Semiconductor laser; Superscontinuum; Broadband; Quantum-dot; Inhomogeneous broadening;
D O I
暂无
中图分类号
学科分类号
摘要
We present the analysis of threshold conditions that produces wideband- stimulated emission in semiconductor quantum-dot laser. Our theoretical model reveals critical occurrence of broadband lasing when the energy spacing between quantized energy states (ΔE) is comparable to the inhomogeneous broadening of quantum dot nanostructures.
引用
收藏
页码:1227 / 1231
页数:4
相关论文
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