Growth of III-N materials and devices by metalorganic chemical vapor deposition

被引：0
作者：
R. D. Dupuis
P. A. Grudowski
C. J. Eiting
J. Park
C. J. Eiting
机构：
[1] The University of Texas at Austin,Microelectronics Research Center PRC/MER 1606D
[2] The Air Force Research Lab.,R9900
[3] Materials & Manufacturing Directorate,undefined
[4] WPAFB,undefined
来源：
Semiconductors | 1999年 / 33卷
关键词：
Nitride; Sapphire; Magnetic Material; Chemical Vapor Deposition; Vapor Deposition;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The characteristics of III-V nitride semiconductor epitaxial layers grown by metalorganic chemical vapor deposition are of interest for the realization of many technologically important devices. This paper will review heteroepitaxial growth on (0001) sapphire substrates as well as the selective-area and subsequent lateral epitaxial overgrowth on masked substrate surfaces.
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页码：965 / 969
页数：4
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