Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach

被引：0

作者：

L. D’Ortenzi

R. Monsù

E. Cara

M. Fretto

S. Kara

S. J. Rezvani

L. Boarino

机构：

[1] INRiM (Istituto Nazionale di Ricerca Metrologica),Nanoscience and Materials Division

[2] Politecnico di Torino,Department of Chemical Engineering, Faculty of Technology

[3] University of Blida 1,undefined

[4] Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE),undefined

[5] Università di Camerino,undefined

来源：

Nanoscale Research Letters | 2016年 / 11卷

关键词：

Metal-assisted chemical etching; Nanosphere lithography; Silicon nanowires; Electrical contacts; Electron beam lithography; Focused ion beam; Schottky barrier; Rough surface;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize the electrical contacts in order to enable electrical measurement on a rough silicon nanowire device: we compared FIB-assisted platinum deposition for the fabrication of electrical contact with EBL technique.

引用

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