Simulation of Silicon Carbide Sputtering by a Focused Gallium Ion Beam

被引：0
|
作者：
A. V. Rumyantsev
O. V. Podorozhniy
R. L. Volkov
N. I. Borgardt
机构：
[1] National Research University of Electronic Technology (MIET),
来源：
Semiconductors | 2022年 / 56卷
关键词：
focused ion beam; sputtering; silicon carbide; Monte Carlo method;
D O I：
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学科分类号：
摘要：
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页码：487 / 492
页数：5
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