Simulation of Silicon Carbide Sputtering by a Focused Gallium Ion Beam

被引：0
作者：
A. V. Rumyantsev
O. V. Podorozhniy
R. L. Volkov
N. I. Borgardt
机构：
[1] National Research University of Electronic Technology (MIET),
来源：
Semiconductors | 2022年 / 56卷
关键词：
focused ion beam; sputtering; silicon carbide; Monte Carlo method;
D O I：
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摘要：
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页码：487 / 492
页数：5
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共 62 条
[1]  
Menzel R.(1998)Nucl. Instrum. Methods Phys. Res Appl. Surf. Sci. 136 1-undefined
[2]  
Bachmann T.(2017)Nucl. Instrum. Methods Phys. Res Appl. Phys. Lett. 111 051904-undefined
[3]  
Machalett F.(2005)Nucl. Instrum. Methods Phys. Res Vacuum 79 100-undefined
[4]  
Yang Y.(1999)Nucl. Instrum. Methods Phys. Res Sect. B 148 545-undefined
[5]  
Taylor S.(2014)Nucl. Instrum. Methods Phys. Res Nanofabrication 1 35-undefined
[6]  
Alshehri H.(2018)Nucl. Instrum. Methods Phys. Res J. Appl. Phys. 123 125104-undefined
[7]  
Wang L.(2015)undefined Sect. B 365 44-undefined
[8]  
Tsvetkova T.(2018)undefined Comput. Mater. Sci. 151 73-undefined
[9]  
Takahashi S.(2019)undefined J. Nucl. Mater. 520 273-undefined
[10]  
Zayats A.(1998)undefined J. Vacuum Sci. Technol. B 16 540-undefined
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