Junction properties of Schottky diode based on composite organic semiconductors

Composite of polyaniline with polyvinyl chloride (PANI-PVC) has been used for the fabrication of Schottky diode with configuration Pt/PANI-PVC/In. Current-voltage (I-V) plots were non-linear and capacitance-voltage (C-V) plots were almost linear in reverse bias indicating rectification behavior. The observed current-voltage characteristics can be satisfactorily fitted using the modified Schottky equation. Various junction parameters were calculated from the temperature dependent I-V and C-V data and discussed. It has been observation that ideality factor decreases as the temperature increases. Impedance studies shows the R(RC)(RC) equivalent circuit for the fabricated Schottky diode.