An analytical model of the diffusion redistribution of ion-implanted impurity in the gate region of a MOS transistor

被引：0
|
作者：
E. N. Bormontov
Yu. I. Bryazgunov
V. P. Lezhenin
机构：
[1] Voronezh State University,
来源：
Technical Physics Letters | 2003年 / 29卷
关键词：
Silicon; Thermal Annealing; Gate Region; Impurity Segregation; Diffusion Redistribution;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The problem of a diffusion redistribution of an ion-implanted impurity in the silicon dioxide-silicon system in the course of thermal annealing is solved with allowance for the difference in the parameters of the two media and for the impurity segregation at the interface.
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页码：47 / 50
页数：3
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