Systematic features of the formation of semiconductor nanostructures using a focused ion beam

被引：0

作者：

A. V. Bessonova

V. K. Nevolin

A. V. Romashkin

K. A. Tsarik

机构：

[1] National research university “Moscow Institute of Electronic Technology” (MIET),

来源：

Semiconductors | 2012年 / 46卷

关键词：

GaAs; Gallium Arsenide; Etch Depth; Nanostructure Fabrication; Etching Result;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The systematic features of three-dimensional nanostructure fabrication using a focused ion beam are studied. The dependence of the depth of ion-beam-modified structures on the number of etching passes for the same ion dose is revealed with the aim of achieving accurate and predictable nanostructure formation. At the qualitative level, the effect of the thermodynamic parameters of Si, GaAs, and GaN semiconductors on the results of etching is analyzed.

引用

页码：1604 / 1607

页数：3

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