The synthesis of semiconducting polymers in a low-temperature plasma

The paper presents a brief description of the plasma chemical method for synthesizing semiconducting polymers and its development at Karpov Research Institute of Physical Chemistry. The procedures used in the synthesis of such polymeric structures with the use of electric discharges of various types are analyzed. The method for the preparation of semiconducting polymers in a dc discharge developed by these authors is considered in detail. Films of thickness from 20 nm to 10 μm synthesized by this method are homogeneous, continuous, do not contain impurities, and possess high thermal stability. These polymeric films are characterized by high intrinsic (up to 10−4 Ω−1 cm−1) and impurity (up to 102 Ω−1 cm−1) conductivity, that is, contain fairly extended polyconjugation chains. A wide range of compounds can be used as starting materials. For many of them, polymers cannot be obtained by other methods. It is assumed that polymer chain growth occurs through the addition of radical cations formed under the action of active plasma components.