Multiferroic- and bandgap-tuning in BiFeO3 nanoparticles via Zn and Y co-doping

被引:0
|
作者
Zhongchao Wang
Yuhui Ma
Yunhua Zhou
Ruiyuan Hu
Weiwei Mao
Jian Zhang
Yonggang Min
Jiangping Yang
Xing’ao Li
Wei Huang
机构
[1] Nanjing University of Posts and Telecommunications (NUPT),Key Laboratory for Organic Electronics & Information Displays (KLOEID), Synergetic Innovation Center for Organic Electronics and Information Displays (SICOEID), Institute of Advanced Materials (IAM)
[2] Nanjing University of Posts and Telecommunications (NUPT),School of Science
[3] Nanjing Tech University (NanjingTech),Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), National Synergistic Innovation Center for Advanced Materials (SICAM)
来源
Journal of Materials Science: Materials in Electronics | 2017年 / 28卷
关键词
BiFeO3; Leakage Current Density; Ferromagnetic Property; Multiferroic Property; Leakage Current Property;
D O I
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中图分类号
学科分类号
摘要
The pure and Y, Zn co-doped BiFeO3 nanoparticles were synthesized using a sol–gel method. The effect of Zn, Y co-doping on the structural, optical, electrical and magnetic properties is systematically investigated. The X-ray diffraction revealed that Y, Zn co-doping could trigger phase transformation from rhombohedral phase to cubic phase. The surface topography characterized by scanning electron microscope shows that the grain diameter decreased with increase of Y doping concentration. UV–VIS spectroscopy indicates an apparent blue shift compared to that of the undoped sample. Accordingly, the direct optical band gap of doped samples decreases from 1.43 to 1.28 eV. Meanwhile, with the increase of Y element, the leakage current property is improved as the value decreased about two orders of magnitude. Moreover, analyzing from Vibrating sample magnetometer, the magnetic properties of Zn, Y co-doped samples were improved compared to the pure BFO. In this study, the Zn, Y ions not only contribute to tune band gap, but also simultaneously play a key role in multiferroic-tuning, which offers an available way to adjust the band gap and improve the multiferroic properties of BFO based devices.
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页码:11338 / 11345
页数:7
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