Formation of CrSi2 nanoislands on Si(111)7 × 7 and epitaxial growth of silicon overlayers in Si(111)/CrSi2 nanocrystallites/Si heterostructures
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作者:
N. G. Galkin
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机构:Russian Academy of Sciences,Institute of Automatics and Control Processes, Far East Division
N. G. Galkin
T. V. Turchin
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机构:Russian Academy of Sciences,Institute of Automatics and Control Processes, Far East Division
T. V. Turchin
D. L. Goroshko
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机构:Russian Academy of Sciences,Institute of Automatics and Control Processes, Far East Division
D. L. Goroshko
S. A. Dotsenko
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机构:Russian Academy of Sciences,Institute of Automatics and Control Processes, Far East Division
S. A. Dotsenko
E. D. Plekhov
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机构:Russian Academy of Sciences,Institute of Automatics and Control Processes, Far East Division
E. D. Plekhov
A. I. Cherednichenko
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机构:Russian Academy of Sciences,Institute of Automatics and Control Processes, Far East Division
A. I. Cherednichenko
机构:
[1] Russian Academy of Sciences,Institute of Automatics and Control Processes, Far East Division
[2] Far East State University,Institute of Chemistry, Far East Division
[3] Russian Academy of Sciences,undefined
来源:
Technical Physics
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2007年
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52卷
关键词:
81.07.-b;
81.70.-q;
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摘要:
Low-energy electron diffraction and differential reflectance spectroscopy are used to study the self-formation of chromium disilicide (CrSi2) nanoislands on a Si(111) surface. The semiconductor properties of the islands show up even early in chromium deposition at a substrate temperature of 500°C, and the two-dimensional growth changes to the three-dimensional one when the thickness of the chromium layer exceeds 0.06 nm. The maximal density of the islands and their sizes are determined. The MBE growth of silicon over the CrSi2 nanoislands is investigated, an optimal growth temperature is determined, and 50-nm-thick atomically smooth silicon films are obtained. Ultraviolet photoelectron spectroscopy combined with the ion etching of the specimens with embedded nanocrystallites demonstrates the formation of the valence band, indicating the crystalline structure of the CrSi2. Multilayer epitaxial structures with embedded CrSi2 nanocrystallites are grown.