Linear properties of ternary chalcopyrite semiconductors
被引:0
|
作者:
V. Kumar
论文数: 0引用数: 0
h-index: 0
机构:Indian School of Mines,Department of Electronics Engineering
V. Kumar
V. Jha
论文数: 0引用数: 0
h-index: 0
机构:Indian School of Mines,Department of Electronics Engineering
V. Jha
A. Sinha
论文数: 0引用数: 0
h-index: 0
机构:Indian School of Mines,Department of Electronics Engineering
A. Sinha
机构:
[1] Indian School of Mines,Department of Electronics Engineering
来源:
Indian Journal of Physics
|
2015年
/
89卷
关键词:
Energy gaps;
Ionicity;
Dielectric constant;
A;
B;
C;
and A;
B;
C;
chalcopyrite semiconductors;
77.84.Jd;
81.05.Fb;
42.70.Qs;
52.65.-y;
71.45.Gm;
D O I:
暂无
中图分类号:
学科分类号:
摘要:
Linear properties of ternary chalcopyrite semiconductors have been studied. New relations based on plasma oscillations theory of solids have been proposed for calculation of homopolar, heteropolar and average energy gaps, dielectric constant and ionicity of A–C and B–C bonds in AIBIIIC2VI and AIIBIVC2V groups of semiconductors. The values of these parameters for 13 new chalcopyrites of AIIBIVC2V family have been calculated. The calculated values are compared with the available reported values and a fairly good agreement has been obtained.