Linear properties of ternary chalcopyrite semiconductors

被引：0
|
作者：
V. Kumar
V. Jha
A. Sinha
机构：
[1] Indian School of Mines,Department of Electronics Engineering
来源：
Indian Journal of Physics | 2015年 / 89卷
关键词：
Energy gaps; Ionicity; Dielectric constant; A; B; C; and A; B; C; chalcopyrite semiconductors; 77.84.Jd; 81.05.Fb; 42.70.Qs; 52.65.-y; 71.45.Gm;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Linear properties of ternary chalcopyrite semiconductors have been studied. New relations based on plasma oscillations theory of solids have been proposed for calculation of homopolar, heteropolar and average energy gaps, dielectric constant and ionicity of A–C and B–C bonds in AIBIIIC2VI and AIIBIVC2V groups of semiconductors. The values of these parameters for 13 new chalcopyrites of AIIBIVC2V family have been calculated. The calculated values are compared with the available reported values and a fairly good agreement has been obtained.
引用
收藏
页码：233 / 240
页数：7
相关论文
共 50 条
  • [1] Linear properties of ternary chalcopyrite semiconductors
    Kumar, V.
    Jha, V.
    Sinha, A.
    INDIAN JOURNAL OF PHYSICS, 2015, 89 (03) : 233 - 240
  • [2] Thermal properties of chalcopyrite semiconductors
    Verma, A. S.
    PHILOSOPHICAL MAGAZINE, 2009, 89 (02) : 183 - 193
  • [3] Quadrupole interaction in ternary chalcopyrite semiconductors:: Experiments and theory
    Dietrich, M
    Burchard, A
    Degering, D
    Deicher, M
    Kortus, J
    Magerle, R
    Möller, A
    Samokhvalov, V
    Unterricker, S
    Vianden, R
    ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES, 2000, 55 (1-2): : 256 - 260
  • [4] Debye temperature and melting point of ternary chalcopyrite semiconductors
    Kumar, V.
    Shrivastava, A. K.
    Banerji, Rajib
    Dhirhe, D.
    SOLID STATE COMMUNICATIONS, 2009, 149 (25-26) : 1008 - 1011
  • [5] Adiabatic bond charge model for lattice dynamics of ternary chalcopyrite semiconductors
    Gürel, T
    Eryigit, R
    CRYSTAL RESEARCH AND TECHNOLOGY, 2006, 41 (01) : 83 - 91
  • [6] OPTOELECTRONIC PROPERTIES OF TERNARY TETRAHEDRAL SEMICONDUCTORS
    Gupta, Rajesh C.
    Verma, Ajay S.
    Singh, Khushvant
    EAST EUROPEAN JOURNAL OF PHYSICS, 2021, (01): : 80 - 88
  • [7] Effect of the Properties of Chalcopyrite Semiconductors on the Physical and Optical Parameters of Cell Layers with CIGS
    Rachedi, Merwan
    Merad, Abdelkrim
    Lorenzini, Giulio
    Ahmad, Hijaz
    Menni, Younes
    Ameur, Houari
    Sifi, Ibtissem
    REVUE DES COMPOSITES ET DES MATERIAUX AVANCES-JOURNAL OF COMPOSITE AND ADVANCED MATERIALS, 2021, 31 (02): : 65 - 72
  • [8] Muon diffusion and trapping in chalcopyrite semiconductors
    Vilao, RC
    Gil, JM
    Alberto, HV
    Duarte, JP
    de Campos, NA
    Weidinger, A
    Yakushev, MV
    Cox, SFJ
    PHYSICA B-CONDENSED MATTER, 2003, 326 (1-4) : 181 - 184
  • [9] THERMODYNAMICAL PROPERTIES OF I-III-VI2-GROUP CHALCOPYRITE SEMICONDUCTORS
    MATSUSHITA, H
    ENDO, S
    IRIE, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (06): : 1181 - 1185
  • [10] Effect of the properties of chalcopyrite semiconductors on the physical and optical parameters of cell layers with cigs
    Rachedi M.
    Merad A.
    Lorenzini G.
    Ahmad H.
    Menni Y.
    Ameur H.
    Sifi I.
    Revue des Composites et des Materiaux Avances, 2021, 31 (02): : 65 - 72
12345