Electron tunneling in a vertical graphene heterostructure

被引：0
|
作者：
Yonghong Yan
Hui Zhao
机构：
[1] Shaoxing University,Department of Physics
[2] Key Laboratory for Advanced Microstructure Materials of the Ministry of Education and Department of Physics,undefined
[3] Tongji University,undefined
来源：
The European Physical Journal B | 2013年 / 86卷
关键词：
Mesoscopic and Nanoscale Systems;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We theoretically investigate electron tunneling through a dual-gated graphene heterostructure, in which a thin barrier layer is sandwiched between two graphene layers. We show that the perfect tunneling of electrons presented in a single layer of graphene (also known as Klein tunneling) could be broken in this structure. Moreover, the structure could exhibit a large switching ratio of current, indicating the architecture may be promising for future electronic devices.
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