Diffusion study of 18O implanted into α-Ti using the nuclear resonance technique

被引：0
|
作者：
F.L. Bregolin
M. Behar
F. Dyment
机构：
[1] Instituto de Física,
[2] UFRGS,undefined
[3] Consejo Nacional de Investigaciones Cientificas y Técnicas (CONICET),undefined
来源：
Applied Physics A | 2007年 / 86卷
关键词：
Arrhenius Behavior; Thick Oxide Layer; Tantalum Foil; Resonant Reaction; Arrhenius Line;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The diffusion of 18O in α-Tiwas studied in the 623–873 K temperature range by using the ion implantation and nuclear resonance techniques. The measurements show that the diffusion coefficients follow an Arrhenius behavior with diffusion parameters D0=(2±1)10-7 m2 s-1 and Q=(±) 16950kJ/mol, values typical of interstitial diffusion mechanism. A comparison of the present and previous results is also done.
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页码：481 / 484
页数：3
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