Poly-Si films with low aluminum dopant containing by aluminum-induced crystallization

被引：0
作者：
ChengLong Wang
DuoWang Fan
ChengBin Wang
ZhongRong Geng
HaiLin Ma
ShuFan Miao
机构：
[1] Lanzhou Jiaotong University,National Engineering Research Center for Technology and Equipment of Green Coating
[2] Lanzhou Jiaotong University,MOE Key Laboratory of Opto
来源：
Science China Physics, Mechanics and Astronomy | 2010年 / 53卷
关键词：
polycrystalline silicon; low doping concentration; AIC; crystallization;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Typically, highly p-doped (2×1018 cm−3) poly-Si films fabricated by the aluminum induced layer exchange (ALILE) process are not suitable for solar cell absorber layers. In this paper, the fabrication of high-quality, continuous polycrystalline silicon (poly-Si) films with lower doping concentrations (2×1016 cm−3) using aluminum-induced crystallization (AIC) is reported. Secondary-ion-mass spectroscopy (SIMS) results showed that annealing at different temperature profiles leads to a variety of Al concentrations. Hall Effect measurements revealed that Al dopant concentration depends on the annealing temperature and temperature profile. Raman spectral analysis indicated that samples prepared via AIC contain some regions with small grains.
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页码：111 / 115
页数：4
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