Photoluminescence and structural defects in silicon layers implanted by iron ions

The photoluminescence spectra of silicon samples implanted by 56Fe+ ions [energy, 170 keV; dose, 1×1016, (2–4)×1017 cm−2] and annealed at temperatures of 800, 900, and 1000°C are measured. The structure of the samples at each stage of treatment is investigated using transmission electron microscopy (TEM). It is found that the phase formation and morphology of crystalline iron disilicide precipitates depend on the dose of iron ions and the annealing temperature. A comparison of the dependences of the intensity and spectral distribution of the photoluminescence on the measurement temperature, annealing temperature, and morphology of the FeSi2 phase revealed the dislocation nature of photoluminescence.