Preparation of High-Purity Gallium from Semiconductor Fabrication Waste

被引:0
作者
S. A. Kozlov
N. A. Potolokov
V. A. Fedorov
M. P. Aganichev
O. L. Sidorov
M. V. Sazhin
I. O. Petrukhin
机构
[1] Research Institute of Electronic Materials,Russian Academy of Sciences
[2] Kurnakov Institute of General and Inorganic Chemistry,undefined
来源
Inorganic Materials | 2003年 / 39卷
关键词
Purification; Inorganic Chemistry; GaAs; Gallium; Waste Material;
D O I
暂无
中图分类号
学科分类号
摘要
Processes are examined for fine purification of metallurgical-grade gallium recovered from various semiconductor waste materials based on GaAs and GaP. A classification is proposed for major Ga-containing waste materials. With allowance made for the behavior of impurities during the purification of metallurgical-grade gallium by different techniques, a multistep process is devised for preparing high-purity (99.9999%) gallium. The products of this process compare well with materials produced from conventional starting reagents and are suitable for the preparation of high-quality compound semiconductors.
引用
收藏
页码:1257 / 1266
页数:9
相关论文
共 24 条
[1]  
Ivanova R.V.(1970)Comparative Analysis of Processes for Recycling Gallium Arsenide Waste Elektron. Tekh., Ser. 14: Mater. 1 108-115
[2]  
Kalashnik O.N.(1960)Einige Probleme der Herstellung und Prufung der Reinstgallium Acta Chim. Sci. Hung. 24 451-457
[3]  
Nisel'son L.A.(1972)Analysis of Works in the Field of Gallium Purification by Zone Melting Nauchn. Tr. Gos. Nauchno-Issled. Proektn. Inst. Redkomet. Prom-sti. 38 104-108
[4]  
Papp E.(1972)Conditions for Zone Melting of Gallium in Relation to Its Physicochemical Properties Nauchn. Tr. Gos. Nauchno-Issled. Proektn. Inst. Redkomet. Prom-sti. 38 109-113
[5]  
Schoimar K.(1994)Gallium Goes Green, Thanks to Recapture Metals Inc. III-Vs Rev. 7 25–28-1435
[6]  
Ivanova R.V.(1972)Phase Diagram of the GaAs-Zn System Izv. Akad. Nauk SSSR, Neorg. Mater. 8 1049–1054-549
[7]  
Bel'skii A.A.(2002)Determination of the Effective Segregation Coefficients of Metallic Impurities in Gallium during Directional Solidification Neorg. Mater. 38 1432-undefined
[8]  
Ivanova R.V.(2003)Segregation Behavior of Impurities in Gallium during Directional Solidification Neorg. Mater. 39 546-undefined
[9]  
Bel'skii A.A.(2003)Preparation of High-Purity Gallium from Semiconductor Waste Naukoemkie Tekhnol. 4 88–94-undefined
[10]  
McDonald J.A.(undefined)undefined undefined undefined undefined-undefined