Design and performance analysis of ohmic contact based SPMT RF MEMS switch

被引：0
作者：
K. Rajasekhar
K. GirijaSravani
K. Srinivasa Rao
机构：
[1] NS Raju Institute of Technology,Department of ECE, Koneru Lakshmaiah Education Foundation (Deemed to Be University) Greenfields, Guntur, A.P&Department of ECE
[2] Koneru Lakshmaiah Education Foundation (Deemed to Be University) Greenfields,Department of ECE
来源：
Microsystem Technologies | 2023年 / 29卷
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摘要：
RF signal routers are become prominent in the modern wireless communication transceivers. SPMT RF MEMS switches predominantly plays significant role in RF signal routing. The recent advances in RF signal routing demands high efficiency offering SPMT RF switches. This communication discusses the design of SPMT switches using ohmic contact RF MEMS technology for RF signal routing applications. The ohmic contact switches are designed using multi-contact cantilever structures. The cantilever structure is incorporated in the CPW line without disturbing the RF properties. The multi-contact cantilever structures helps to improve the reliability of microstructures. The presented SPMT switch was enabled with reconfigurability feature in terms of frequency. Three identical ohmic contact switches are used for the design of SPMT switch. The switch requires a low Actuation voltage of 3.5 V. The presented SPMT RF switch offering low insertion of − 0.45 dB and high isolation of − 65 dB.
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页码：1307 / 1318
页数：11
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