Energy-storage properties of Sr-doped PLZST bulk ceramics and thick films

被引：0
作者：
Xingyu Qi
Hongwei Chen
Bowen Deng
Jinyu Zhao
Meng Wei
Libin Gao
Jihua Zhang
机构：
[1] University of Electronic Science & Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices, Collaboration Innovation Center of Electric Materials and Devices
来源：
Journal of Materials Science: Materials in Electronics | 2019年 / 30卷
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摘要：
The dielectric and energy-storage properties of (Pb0.97−xSrxLa0.02)(Zr0.675Sn0.285Ti0.04)O3 (x = 0, 0.005, 0.01, 0.015) bulk ceramics and thick films were investigated. All samples are orthorhombic perovskite antiferroelectric phase and have dielectric temperature relaxation property. Sr-dopant can improve the stability of the antiferroelectric phase and increase the phase transition field, but cause a decrease in dielectric constant. Thick films have a higher maximum tolerable external electric field strength than bulk ceramics. Compared with undoped thick film, the forward phase transition field and the backward phase transition field of the 1.5% doped thick film increased by 32% and 27%, respectively. The maximum polarization of the 1.5% doped thick film is decreased by 17%. The largest recoverable energy-storage density was obtained in thick film with 1% Sr doping. The largest recoverable energy-storage density is 2.77 J/cm3, which is 9.4% higher than the undoped thick film ceramic and 477% higher than the bulk ceramic with 1% Sr doping. The high energy storage density indicates that the obtained thick film is promising for pulsed power capacitors.
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页码：17916 / 17922
页数：6
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