Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy

被引：0
|
作者：
V. V. Ratnikov
D. V. Nechaev
A. V. Myasoedov
O. A. Koshelev
V. N. Zhmerik
机构：
[1] Ioffe Physical Technical Institute,
[2] Russian Academy of Sciences,undefined
来源：
Technical Physics Letters | 2020年 / 46卷
关键词：
molecular beam epitaxy; AlN/c-sapphire templates; grown-in dislocations; X-ray diffractometry.;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
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页码：389 / 392
页数：3
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