共 50 条
- [1] Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam EpitaxyTECHNICAL PHYSICS LETTERS, 2020, 46 (04) : 389 - 392Ratnikov, V. V.Nechaev, D. V.Myasoedov, A. V.Koshelev, O. A.Zhmerik, V. N.
- [2] Surface reconstruction patterns of AlN grown by molecular beam epitaxy on sapphireJOURNAL OF CRYSTAL GROWTH, 2001, 226 (2-3) : 203 - 208Davis, CSNovikov, SVCheng, TSCampion, RPFoxon, CT
- [3] Epitaxial single-crystal of GaSe epilayers grown on a c-sapphire substrate by molecular beam epitaxyPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 212 (10): : 2201 - 2204Wu, Chia-HsinYang, Chu-ShouWang, Yen-ChiHuang, Hsi-JungHo, Yen-TengWei, Lin-LungChang, Edward Yi
- [4] Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxySUPERLATTICES AND MICROSTRUCTURES, 2016, 93 : 27 - 31Rong, XinWang, XinqiangChen, GuangPan, JianhaiWang, PingLiu, HuapengXu, FujunTan, PinghengShen, Bo
- [5] Studies of N-Doped p-ZnO Layers Grown on c-Sapphire by Radical Source Molecular Beam EpitaxyJOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (05) : 3016 - 3020Ivanov, S. V.El-Shafr, A.Al-Suleiman, M.Bakin, A.Waag, A.Lyublinskaya, O. G.Shmidt, N. M.Listoshin, S. B.Kyutt, R. N.Ratnikov, V. V.Terentyev, A. Ya.Ber, B. Ya.Komissarova, T. A.Ryabova, L. I.Khokhlov, D. R.
- [6] Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBEJOURNAL OF CRYSTAL GROWTH, 2018, 499 : 40 - 46Matta, SamuelBrault, JulienKorytov, MaximThi Quynh Phuong VuongChaix, CatherineAl Khalfioui, MohamedVennegues, PhilippeMassies, JeanGil, Bernard
- [7] The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxyJOURNAL OF CRYSTAL GROWTH, 2009, 311 (06) : 1487 - 1492Wong, Yuen-YeeChang, Edward YiYang, Tsung-HsiChang, Jet-RungChen, Yi-ChengKu, Jui-TaiLee, Ching-TingChang, Chun-Wei
- [8] Investigation of platinum films grown on sapphire (0001) by molecular beam epitaxyJOURNAL OF CRYSTAL GROWTH, 2002, 234 (2-3) : 561 - 568Zhou, HWochner, PSchöps, AWagner, T
- [9] The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxyMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3): : 72 - 75Ruterana, PVermaut, PPotin, VNouet, GBotchkarev, ASalvador, AMorkoc, H
- [10] Radio frequency plasma nitridation of c-plane sapphire;: influence on properties of GaN grown by molecular beam epitaxyMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 58 (03): : 270 - 273Heinlein, CGrepstad, JKRiechert, HAverbeck, R