First-principles study on the structure, electronic and magnetic properties of HoSin (n = 1–12, 20) clusters

被引:0
|
作者
Tai-Gang Liu
Wen-Qing Zhang
Yan-Li Li
机构
[1] Xinxiang Medical University,School of Life Science and Technology
[2] Henan Institute of Science and Technology,School of Mechanics and Electronics
[3] Wuhan University of Technology,Department of Physics
来源
Frontiers of Physics | 2014年 / 9卷
关键词
structure; stability; electronic and magnetic properties; HoSi; cluster;
D O I
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学科分类号
摘要
The structure, electronic and magnetic properties of HoSin(n = 1–12, 20) clusters have been widely investigated by first-principles calculation method based on density functional theory (DFT). From our calculation results, we find that for HoSin(n = 1–12) clusters except n = 7, 10, the most stable structures are a replacement of Si atom in the corresponding pure Sin+1 clusters by Ho atom. The doping of Ho atom makes the stability of Si clusters enhance remarkably, and HoSin(n = 2, 5, 8, 11) clusters are more stable than their neighboring clusters. The magnetic moment of Ho atom in HoSin(n = 1–12, 20) clusters mainly comes from 4f electron of Ho, and never quenches.
引用
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页码:210 / 218
页数:8
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