Conductivity of ultrathin Pb films during growth on Si(111) at low temperatures

被引：0

作者：

O. Pfennigstorf

A. Petkova

Z. Kallassy

M. Henzler

机构：

[1] Institut für Festkörperphysik,

[2] Universität Hannover,undefined

[3] Appelstrasse 2,undefined

[4] 30167 Hannover,undefined

[5] Germany,undefined

来源：

The European Physical Journal B - Condensed Matter and Complex Systems | 2002年 / 30卷

关键词：

PACS. 73.61.At Metal and metallic alloys – 68.55.Jk Structure and morphology; thickness; crystalline orientation and texture – 81.40.Rs Electrical and magnetic properties;

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学科分类号：

摘要：

The electronic properties of thin metallic films strongly depend on their structure. For the preparation of ultrathin films (0.8 to 12 ML) Pb was grown on a Si (111)-7×7 structure at temperatures below 25 K. Percolation as measured by DC conductance starts at 0.7 ML. Up to 4 ML the growing film is disordered. During continuation of the growth the film recrystallizes epitaxially and layer-by-layer growth connected with oscillations of conductivity and LEED intensities is observed even at 25 K. The defect structure as determined by SPA-LEED and the quantum size effect allow a quantitative description of the conductivity oscillations. The experiments show, that the electronic properties of ultrathin Pb films are clearly correlated with the structural properties of the film.

引用

页码：111 / 115

页数：4