Effect of fast annealing on the electrical properties of SiO2/Si structures with thin layers of anodic silicon oxide

被引：0
|
作者：
I. L. Baranov
L. V. Tabulina
L. S. Stanovaya
T. G. Rusalskaya
机构：
[1] Belarussian State University for Informatics and Radio Electronics,
来源：
Semiconductors | 2006年 / 40卷
关键词：
73.40.Qv; 81.65.Mq; 85.30.Tv;
D O I：
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中图分类号：
学科分类号：
摘要：
Effects of fast annealing on the properties of SiO2/Si structures with thin, ∼10 nm, layers of anodic silicon oxide formed on single-crystal Si substrates are studied in relation to the semiconducting properties of the silicon support and to the duration, temperature, and environment of thermal treatment. The optimal duration of high-temperature annealing of structures in an inert atmosphere for their application in the technology of nanosize MOS integrated circuits is determined.
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页码：915 / 919
页数：4
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