Hydrogen sensitivity of a silicon Schottky diode increased by modification of the semiconductor surface microrelief

被引：0
|
作者：
S. V. Tikhov
D. A. Pavlov
P. A. Shilyaev
E. L. Shobolov
A. A. Os’kin
机构：
[1] Nizhni Novgorod State University,
来源：
Technical Physics Letters | 2002年 / 28卷
关键词：
Hydrogen; Silicon; Fractal Dimension; Barrier Height; Schottky Diode;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A nearly atomically smooth semiconductor surface in a Schottky diode based on the palladium-oxide-silicon structure is modified by treating with a selective etchant. It is shown that the appearance of a developed microrelief (with an average roughness of 22–32 nm and a fractal dimension of 2.33–2.40) leads to a decrease in the barrier height of the Pd-Si junction, an increase in the density of states at the oxide-silicon boundary, and a considerable (an order of magnitude) growth in the sensitivity with respect to hydrogen detected by a change in the diode reverse current.
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页码：355 / 356
页数：1
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