Method of determining nondestructive pulsed laser annealing modes for dielectric and semiconductor wafers

被引：3

作者：

Kovalenko A.F. ^{[1
]}

Vorobiev A.A. ^{[1
]}

机构：

[1] Peter the Great Military Academy of Strategic Missile Forces, Kitaigorodskii proezd 9/5, Moscow

来源：

Russian Microelectronics | 2015年 / 44卷 / 8期

关键词：

dielectric and semiconductor materials; laser processing; nondestructive modes; quasi-static thermoelasticity problem; wafer;

D O I：

10.1134/S1063739715080090

中图分类号：

学科分类号：

摘要：

Single-side heating of a wafer with a free surface by pulsed laser annealing has been analyzed within a quasi-static uncoupled thermoelasticity problem. An analytical relationship that can be used as a criterion of wafer thermal strength and helps to determine nondestructive modes of pulsed laser processing of dielectric and semiconductor wafers has been obtained. The model of calculation has been obtained under the assumption that the thermophysical, mechanical, and optical properties of the materials are temperatureindependent. The experimental verification of the adequacy of the model of calculation has shown quite a satisfactory agreement between the calculation and experimental data. © 2015, Pleiades Publishing, Ltd.

引用

页码：590 / 594

页数：4

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